- Package / Case :
- Number of Channels :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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96,142
In-stock
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IR / Infineon | MOSFET MOSFT 5.0A 29mOhm 30V 2.5V drv capable | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 29 mOhms | 0.8 V | 6.8 nC | |||||
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4,193
In-stock
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Infineon Technologies | MOSFET 30V 8.2A 19mOhm 4.8 Qg | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.2 A | 29 mOhms | ||||||||
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3,862
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.6 A | 29 mOhms | 2 V | 11.3 nC | Enhancement | ||||
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7,135
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 30V 6.5A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.5 A | 29 mOhms | 1 V | 22 nC | Enhancement | ||||
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GET PRICE |
59,200
In-stock
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Texas instruments | MOSFET 30V N-CH Pwr MOSFETs | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 29 mOhms | 1.6 V | 2.4 nC | NexFET | |||
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GET PRICE |
8,000
In-stock
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Toshiba | MOSFET N-Ch 30V FET 8A 15W 11nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 29 mOhms | 11 nC | ||||||||
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GET PRICE |
8,000
In-stock
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Toshiba | MOSFET N-Ch 30V FET 8A 15W 11nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 29 mOhms | 11 nC |
