- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
20 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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96,142
In-stock
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IR / Infineon | MOSFET MOSFT 5.0A 29mOhm 30V 2.5V drv capable | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 29 mOhms | 0.8 V | 6.8 nC | ||||||
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5,340
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.024 Ohm 84A MDMesh M5 | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 84 A | 29 mOhms | 204 nC | Enhancement | ||||||
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5,020
In-stock
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Fairchild Semiconductor | MOSFET 40V Dual N & P-Ch PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 6.2 A | 29 mOhms | Enhancement | PowerTrench | ||||||
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4,591
In-stock
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Fairchild Semiconductor | MOSFET SSOT-3 N-CH 20V | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3 A | 29 mOhms | Enhancement | PowerTrench | ||||||
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3,246
In-stock
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IR / Infineon | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 20 V | 6.6 A | 29 mOhms | 18 nC | Enhancement | ||||||
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4,882
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 29 mOhms | - 1.2 V | - 20 nC | Enhancement | |||||
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2,484
In-stock
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Diodes Incorporated | MOSFET 1.4W 20V | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.9 A | 29 mOhms | Enhancement | |||||||
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1,555
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 29mOhms 18nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 6.6 A | 29 mOhms | 0.7 V | 18 nC | Enhancement | |||||
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4,193
In-stock
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Infineon Technologies | MOSFET 30V 8.2A 19mOhm 4.8 Qg | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.2 A | 29 mOhms | |||||||||
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3,862
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.6 A | 29 mOhms | 2 V | 11.3 nC | Enhancement | |||||
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2,044
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 29 mOhms | - 1.2 V | - 20 nC | Enhancement | |||||
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23
In-stock
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IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 200 V | 86 A | 29 mOhms | 5 V | 90 nC | Enhancement | ||||||
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1,560
In-stock
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Texas instruments | MOSFET 12V P-Channel FemtoFET MOSFET 3-PICOSTAR -55 t... | - 6 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 29 mOhms | - 950 mV | 4.2 nC | Enhancement | PicoStar | ||||
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500
In-stock
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Texas instruments | MOSFET 12V P-Channel FemtoFET MOSFET 3-PICOSTAR -55 t... | - 6 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 29 mOhms | - 950 mV | 4.2 nC | Enhancement | PicoStar | ||||
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7,135
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 30V 6.5A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.5 A | 29 mOhms | 1 V | 22 nC | Enhancement | |||||
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GET PRICE |
59,200
In-stock
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Texas instruments | MOSFET 30V N-CH Pwr MOSFETs | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 29 mOhms | 1.6 V | 2.4 nC | NexFET | ||||
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VIEW | IXYS | MOSFET 96 Amps 250V 36 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 96 A | 29 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 96 Amps 250V 36 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 96 A | 29 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 86 A | 29 mOhms | 5 V | 90 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 86 A | 29 mOhms |