- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,069
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 6.2 A | 29 mOhms | 4 V | 39 nC | Enhancement | Directfet | ||||
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5,020
In-stock
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Fairchild Semiconductor | MOSFET 40V Dual N & P-Ch PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 6.2 A | 29 mOhms | Enhancement | PowerTrench | ||||||
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3,862
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.6 A | 29 mOhms | 2 V | 11.3 nC | Enhancement | |||||
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7,135
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 30V 6.5A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.5 A | 29 mOhms | 1 V | 22 nC | Enhancement | |||||
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GET PRICE |
59,200
In-stock
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Texas instruments | MOSFET 30V N-CH Pwr MOSFETs | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 29 mOhms | 1.6 V | 2.4 nC | NexFET | ||||
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72
In-stock
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IR / Infineon | MOSFET MOSFT 150V 35A 35mOhm 39nC Qg | 20 V | SMD/SMT | DirectFET-MZ | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 6.2 A | 29 mOhms | 4.9 V | 39 nC |