- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,436
In-stock
|
IR / Infineon | MOSFET 1 P-CH -30V HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 21 A | 4.6 mOhms | 165 nC | ||||||||
|
|
1,021
In-stock
|
STMicroelectronics | MOSFET N-Ch 40 Volt 120 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 4.6 mOhms | Enhancement | ||||||
|
|
1,750
In-stock
|
Infineon Technologies | MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 40 V | 19 A | 4.6 mOhms | 29 nC | Directfet | |||||||
|
|
2,402
In-stock
|
IR / Infineon | MOSFET 40V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 84 A | 4.6 mOhms | 3 V | 44 nC | Enhancement | ||||
|
|
1,216
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 4.6 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | |||
|
|
41,120
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 41nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 120 A | 4.6 mOhms | 1.8 V | 41 nC | |||||
|
|
257
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 4.6 mOhms | 79 nC | ||||||||
|
|
1,551
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.6 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | |||
|
|
582
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 4.6 mOhms | 2 V to 4 V | 79 nC | Enhancement | ||||
|
|
1,828
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17.6 A | 4.6 mOhms | 2.3 V | 41 nC | Enhancement | PowerDI | |||
|
|
495
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 4.6 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
|
|
2,371
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 52A 5.8MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 52 A | 4.6 mOhms | 1.3 V | 22.2 nC | Enhancement | ||||
|
|
1,500
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 52A 5.8MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 52 A | 4.6 mOhms | 1.3 V | 22.2 nC | Enhancement | ||||
|
|
2,057
In-stock
|
Texas instruments | MOSFET 30V,NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 4.6 mOhms | 1.3 V | 10 nC | NexFET | ||||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-Ch 40 Volt 120 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 4.6 mOhms | Enhancement | ||||||
|
|
VIEW | Infineon Technologies | MOSFET 20V 1 N-CH HEXFET DIRECTFET (ST) | 20 V | SMD/SMT | DirectFET-ST | Reel | 1 Channel | Si | N-Channel | 20 V | 18 A | 4.6 mOhms | 18 nC | ||||||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.6 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 4.6 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
|
|
970
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 4.6 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | |||
|
|
VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17.6 A | 4.6 mOhms | 2.3 V | 41 nC | Enhancement | PowerDI | |||
|
|
VIEW | onsemi | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 4.6 mOhms | ||||||||
|
|
800
In-stock
|
onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 4.6 mOhms | 1.2 V | 220 nC | Enhancement |
