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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Channel Mode Tradename
IRF1018ESPBF
1+
$1.400
10+
$1.200
100+
$0.916
500+
$0.809
RFQ
933
In-stock
Infineon Technologies MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC 20 V SMD/SMT TO-263-3     Tube 1 Channel Si N-Channel 60 V 79 A 7.1 mOhms 46 nC    
IRFR1018EPBF
1+
$1.460
10+
$1.250
100+
$0.955
500+
$0.844
RFQ
822
In-stock
Infineon Technologies MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC 20 V SMD/SMT TO-252-3     Tube 1 Channel Si N-Channel 60 V 79 A 7.1 mOhms 46 nC    
IRL8113PBF
1+
$1.520
10+
$1.300
100+
$1.000
500+
$0.885
RFQ
958
In-stock
Infineon Technologies MOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl 20 V Through Hole TO-220-3     Tube 1 Channel Si N-Channel 30 V 105 A 7.1 mOhms 23 nC    
IPP100N08S2-07
14000+
$0.904
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 75V 100A TO220-3 OptiMOS 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 75 V 100 A 7.1 mOhms   Enhancement OptiMOS
IPP80N06S4-07
1+
$1.110
10+
$0.893
100+
$0.686
500+
$0.606
RFQ
438
In-stock
Infineon Technologies MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2   Through Hole TO-220-3     Tube 1 Channel Si N-Channel 60 V 80 A 7.1 mOhms     OptiMOS
IPP70N04S3-07
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 40V 70A TO220-3 OptiMOS-T 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 70 A 7.1 mOhms   Enhancement OptiMOS
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