- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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863
In-stock
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IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 58 nC | ||||||
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596
In-stock
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STMicroelectronics | MOSFET N-Ch 200V 0.01 Ohm 130A STripFET II | 20 V | Through Hole | Max247-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 10 mOhms | 3 V | 338 nC | |||||||
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1,318
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 10 mOhms | Enhancement | UniFET | |||||
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678
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 53 A | 10 mOhms | Enhancement | QFET | |||||
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632
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 85 A | 10 mOhms | Enhancement | QFET | |||||
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8,488
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 10 mOhms | Enhancement | QFET | |||||
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917
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 100 A | 10 mOhms | 40 nC | ||||||||
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424
In-stock
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IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 105 A | 10 mOhms | 3 V | 110 nC | Enhancement | ||||
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151
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 10 mOhms | Enhancement | PowerTrench | |||||
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262
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 77A 65.3nC 10mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 77 A | 10 mOhms | 65.3 nC | ||||||||
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127
In-stock
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IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 185 nC | Enhancement | |||||
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110
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.0085Ohm typ 80A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 10 mOhms | 3.5 V | 45 nC | |||||
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33
In-stock
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IXYS | MOSFET P-Channel: Standard MOSFET | 25 V | Through Hole | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 140 A | 10 mOhms | 400 nC | Enhancement | |||||
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59
In-stock
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IXYS | MOSFET 180 Amps 150V 0.01 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 180 A | 10 mOhms | 5 V | 240 nC | Enhancement | PolarHT | |||
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60
In-stock
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IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 58 nC | ||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 40A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 40 A | 10 mOhms | 9 nC | Enhancement | OptiMOS | ||||
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411
In-stock
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Infineon Technologies | MOSFET 30V 100A 7 mOhm Auto Lgc Lvl MOSFET | 16 V | Through Hole | TO-220-3 | + 175 C | Tube | Si | N-Channel | 30 V | 100 A | 10 mOhms | 40 nC | ||||||||
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100
In-stock
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IXYS | MOSFET 90 Amps 75V 0.01 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 90 A | 10 mOhms | Enhancement | ||||||
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102
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 10mOhms | 16 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 10 mOhms | 65.3 nC | Enhancement | ||||||
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290
In-stock
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Texas instruments | MOSFET 40V N-Ch NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 10 mOhms | 1.9 V | 19 nC | NexFET | ||||
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177
In-stock
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IXYS | MOSFET TrenchP Channel Power MOSFETs | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 140 A | 10 mOhms | - 2 V to - 4 V | 400 nC | Enhancement | ||||
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668
In-stock
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Fairchild Semiconductor | MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 75 A | 10 mOhms | Enhancement | UltraFET | |||||
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VIEW | IXYS | MOSFET 170 Amps 100V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 10 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 170 Amps 100V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 10 mOhms | Enhancement | HyperFET | |||||
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159
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 116 A | 10 mOhms | 40 nC | Enhancement | |||||
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73
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 10mOhms 65.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 10 mOhms | 1 V to 2 V | 65.3 nC | Enhancement |
