- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,295
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 15 nC | Enhancement | OptiMOS | ||||
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7,878
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 10 mOhms | 1 V | 47.1 nC | Enhancement | |||||
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4,360
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | ||||
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4,594
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 15 nC | Enhancement | OptiMOS | ||||
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2,110
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 65A 10mOhm 10nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 10 mOhms | 1 V | 14 nC | ||||||||
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2,980
In-stock
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Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | 20 V | SMD/SMT | DFN3030-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.62 A | 10 mOhms | 1 V | 18.85 nC | Enhancement | |||||
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5,000
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11.2 A | 10 mOhms | 1 V | 45.7 nC | Enhancement | |||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgs 0.5W 70A | 20 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 10 mOhms | 1 V | 14 nC | Enhancement |