- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
678
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 53 A | 10 mOhms | Enhancement | QFET | |||||
|
|
632
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 85 A | 10 mOhms | Enhancement | QFET | |||||
|
|
8,488
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 10 mOhms | Enhancement | QFET | |||||
|
|
2,147
In-stock
|
Diodes Incorporated | MOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15.2 A | 10 mOhms | - 3 V | 41 nC | Enhancement | ||||
|
|
33
In-stock
|
IXYS | MOSFET P-Channel: Standard MOSFET | 25 V | Through Hole | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 140 A | 10 mOhms | 400 nC | Enhancement | |||||
|
|
1,923
In-stock
|
Diodes Incorporated | MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.3 A | 10 mOhms | 800 mV | 17.4 nC | Enhancement | ||||
|
|
9,292
In-stock
|
Fairchild Semiconductor | MOSFET -30V P-Channel Power Trench | 25 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 20 A | 10 mOhms | - 1.8 V | 37 nC | PowerTrench | ||||
|
|
7,907
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -30V -12A 11.9mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 10 mOhms | - 1.8 V | 18 nC | Enhancement |