- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,005
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench MOSFET | SMD/SMT | MLP-12 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel | 60 V | 8 A | 17.5 mOhms | PowerTrench | |||||||
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23,800
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
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20,530
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
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GET PRICE |
4,485
In-stock
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IR / Infineon | MOSFET MOSFT 250V 83A 21mOhm 195nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 93 A | 17.5 mOhms | 180 nC | Enhancement | ||||
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GET PRICE |
13,610
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 89 nC | Enhancement | |||
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910
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 89 nC | Enhancement | ||||
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4,800
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 17.5 mOhms | 22 nC | Enhancement | Directfet | ||||
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41,000
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
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50,000
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 17.5 mOhms | 6.2 nC | ||||||||
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1,987
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 49A 17.5mOhm 42nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | ||||||||
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2,659
In-stock
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Infineon Technologies | MOSFET 30V 8.3A 17.5mOhm 2.5V drive capable | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 17.5 mOhms | ||||||||
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588
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | Enhancement | ||||||
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1,262
In-stock
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STMicroelectronics | MOSFET P-channel 40 V, 0.0175 Ohm typ., 36 A STripFET F6 in a D... | +/- 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 36 A | 17.5 mOhms | - 2.5 V | 22 nC | Enhancement | |||||
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255
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -9.8A 17.5mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 17.5 mOhms | 14 nC | Enhancement | |||||
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997
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | Enhancement | ||||||
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451
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 17.5mOhms 16.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | Enhancement | |||||
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1,206
In-stock
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IR / Infineon | MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | N-Channel | 30 V | 11 A | 17.5 mOhms | 6.2 nC | ||||||||
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1,732
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 17.5mOhms 14nC | 25 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 17.5 mOhms | 14 nC | ||||||||
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126
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 7mOhms 30nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 2 V to 4 V | 42 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | Enhancement |
