- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,619
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.2 mOhms | 1 V | 131 nC | Enhancement | OptiMOS | |||
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333
In-stock
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Toshiba | MOSFET N-Ch 30V 2970pF 41nC 33A 30W | 20 V | SMD/SMT | TSON-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 188 A | 1.2 mOhms | 1.1 V | 41 nC | Enhancement | |||||
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250
In-stock
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Texas instruments | MOSFET 30V N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.2 mOhms | 1.15 V | 39 nC | Enhancement | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.2 mOhms | 1 V | 131 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 1.2 mOhms | Enhancement | OptiMOS |
