- Mounting Style :
- Package / Case :
- Number of Channels :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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773
In-stock
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IR / Infineon | MOSFET 100V 180A 4.3 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-263-7 | + 175 C | Reel | Si | N-Channel | 100 V | 190 A | 3.2 mOhms | 87 nC | ||||||||
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102
In-stock
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IXYS | MOSFET 3-Phase Full Bridge with Trench MOSFETs | 15 V | SMD/SMT | ISOPLUS-DIL-17 | - 55 C | + 175 C | 6 Channel | Si | N-Channel | 100 V | 120 A | 3.2 mOhms | 2 V | 88 nC | Enhancement | ||||
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1,584
In-stock
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Infineon Technologies | MOSFET 100V 190A 3.9 mOhm Auto Lgc Lvl MOSFET | 16 V | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 100 V | 190 A | 3.2 mOhms | 93 nC | |||||||
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VIEW | Infineon Technologies | MOSFET MOSFT 100V 190A 3.9mOhm 93nC-7 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.2 mOhms | 93 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 320 Amps 100V | Chassis Mount | SOT-227-4 | Tube | Si | N-Channel | 100 V | 320 A | 3.2 mOhms | ||||||||||
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779
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 3.2 mOhms | 4.5 V | 160 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET 100V 190A 3.9 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-263-7 | + 175 C | Reel | Si | N-Channel | 100 V | 190 A | 3.2 mOhms | 93 nC |
