- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Tradename :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,382
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET PWR MOSFET 2.4mOhms | 16 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.2 mOhms | 82 nC | |||||||||
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2,474
In-stock
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Fairchild Semiconductor | MOSFET N-channel Power Trench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3.2 mOhms | 3.2 V | 42 nC | Enhancement | PowerTrench | ||||
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GET PRICE |
6,750
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V, 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3.2 mOhms | 1.2 V | 60 nC | Enhancement | OptiMOS | |||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V, 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3.2 mOhms | 1.2 V | 60 nC | Enhancement | |||||
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46,000
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_30/40V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.2 mOhms | 3 V | 103 nC | Enhancement | |||||
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VIEW | Renesas Electronics | MOSFET MP-3ZP PoTr-MOSFET Low | 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3.2 mOhms | 3 V | 90 nC |