- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,697
In-stock
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Infineon Technologies | MOSFET 25V Dual N-Ch 1.45mOhm 31nC 45A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 64 A | 3.2 mOhms | 1.6 V | 15 nC, 47 nC | Enhancement | FastIRFet | |||
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1,892
In-stock
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Fairchild Semiconductor | MOSFET 25V 50A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 27 A | 3.2 mOhms | Enhancement | PowerTrench | |||||
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115
In-stock
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IR / Infineon | MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 64 A | 3.2 mOhms | 1.6 V | 15 nC, 66 nC | Enhancement | FastIRFet | |||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET 25V 40A 3.2mOhm N-Ch PowerTrench SyncFET | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3.2 mOhms | 1.7 V | SyncFET | ||||||
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346
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 160 A | 3.2 mOhms | 1.35 V to 2.35 V | 35 nC | Enhancement |
