- Mounting Style :
- Qg - Gate Charge :
- Tradename :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
19,680
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | |||
|
|
5,889
In-stock
|
STMicroelectronics | MOSFET N-channel 30 V, 0.0024 Ohm typ., 160 A, STripFET(TM) VI... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 30 V | 120 A | 3.2 mOhms | 1 V to 2.5 V | 42 nC | Enhancement | |||||
|
|
9,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | |||
|
|
2,474
In-stock
|
Fairchild Semiconductor | MOSFET N-channel Power Trench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3.2 mOhms | 3.2 V | 42 nC | Enhancement | PowerTrench | |||
|
|
1,892
In-stock
|
Fairchild Semiconductor | MOSFET 25V 50A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 27 A | 3.2 mOhms | Enhancement | PowerTrench | |||||
|
|
786
In-stock
|
Fairchild Semiconductor | MOSFET MV7 60V N-channel Standard Gate PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 3.2 mOhms | 2 V | 126 nC | Enhancement | PowerTrench | |||
|
|
605
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.2 mOhms | Enhancement | PowerTrench | |||||
|
|
531
In-stock
|
Fairchild Semiconductor | MOSFET PT3 75V 3.2mohm | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 235 A | 3.2 mOhms | Enhancement | PowerTrench | |||||
|
|
2,114
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 161 A | 3.2 mOhms | 2.3 V | 34 nC | Enhancement | ||||
|
|
159
In-stock
|
IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 340 A | 3.2 mOhms | 4 V | 300 nC | Enhancement | HiPerFET | |||
|
|
254
In-stock
|
Fairchild Semiconductor | MOSFET 75V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 235 A | 3.2 mOhms | Enhancement | PowerTrench | |||||
|
|
181
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 84A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 3.2 mOhms | 124 nC | Enhancement | OptiMOS | ||||
|
|
36
In-stock
|
IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 340 A | 3.2 mOhms | 4 V | 300 nC | Enhancement | TrenchT2, HiperFET | ||||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 60 V, 0.0025 mOhm typ., 80 A STripFET(TM) VI... | 20 V | SMD/SMT | H2PAK-2 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.2 mOhms | 2 V | 55 nC | Enhancement | |||||
|
|
VIEW | STMicroelectronics | MOSFET N-Ch 30 Volt 120 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 120 A | 3.2 mOhms | Enhancement | ||||||
|
|
46,000
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL_30/40V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.2 mOhms | 3 V | 103 nC | Enhancement | ||||
|
|
VIEW | STMicroelectronics | MOSFET N-Ch 30 Volt 120 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 120 A | 3.2 mOhms | Enhancement | ||||||
|
|
779
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 3.2 mOhms | 4.5 V | 160 nC | Enhancement |