- Manufacture :
- Mounting Style :
- Package / Case :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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1,382
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET PWR MOSFET 2.4mOhms | 16 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.2 mOhms | 82 nC | ||||||
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2,976
In-stock
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STMicroelectronics | MOSFET N-Ch 30 Volt 100 Amp | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 100 A | 3.2 mOhms | Enhancement | ||||
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1,584
In-stock
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Infineon Technologies | MOSFET 100V 190A 3.9 mOhm Auto Lgc Lvl MOSFET | 16 V | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 100 V | 190 A | 3.2 mOhms | 93 nC | ||||||
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VIEW | Infineon Technologies | MOSFET MOSFT 100V 190A 3.9mOhm 93nC-7 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.2 mOhms | 93 nC | Enhancement |
