- Manufacture :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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980
In-stock
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Fairchild Semiconductor | MOSFET NCH 60V 3.0Mohm | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 193 A | 3.2 mOhms | PowerTrench | ||||||||
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5,889
In-stock
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STMicroelectronics | MOSFET N-channel 30 V, 0.0024 Ohm typ., 160 A, STripFET(TM) VI... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 30 V | 120 A | 3.2 mOhms | 1 V to 2.5 V | 42 nC | Enhancement | |||||
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254
In-stock
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Fairchild Semiconductor | MOSFET 75V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 235 A | 3.2 mOhms | Enhancement | PowerTrench | |||||
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100
In-stock
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Toshiba | MOSFET 80V N-Ch PWR FET 9000pF 130nC 214A | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 80 V | 214 A | 3.2 mOhms | 130 nC | |||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 30 Volt 120 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 120 A | 3.2 mOhms | Enhancement | ||||||
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779
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 3.2 mOhms | 4.5 V | 160 nC | Enhancement |
