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15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
7,310
In-stock
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IR / Infineon | MOSFET MOSFT 150V 171 5.9mOhm 151nC Qg | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 171 A | 4.8 mOhms | 151 nC | ||||||||
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3,109
In-stock
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IR / Infineon | MOSFET 100V 127A 6mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 2 V | 170 nC | Enhancement | |||||
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1,019
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 127A 6mOhm 120nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | |||||||||
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54,900
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 127A 6mOhm 120nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 134 A | 4.8 mOhms | 120 nC | |||||||||
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327
In-stock
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IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 128 A | 4.8 mOhms | 2 V | 188 nC | Enhancement | |||||
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503
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 100 A | 4.8 mOhms | 3 V | 137 nC | OptiMOS | |||||
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559
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.8 mOhms | Enhancement | OptiMOS | ||||||
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238
In-stock
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IR / Infineon | MOSFET N-CHANNEL 100+ | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 171 A | 4.8 mOhms | 3 V | 227 nC | Enhancement | |||||
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1,181
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 4mOhms 34nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 155 C | Tube | 1 Channel | Si | N-Channel | 30 V | 20 A | 4.8 mOhms | 34 nC | Enhancement | ||||||
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13,605
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 6mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | |||||||||
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392
In-stock
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IR / Infineon | MOSFET MOSFT 100V 127A 6mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | |||||||||
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5,010
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 167 A | 4.8 mOhms | 4 V | 92 nC | PowerTrench | |||||||
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5,487
In-stock
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IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.8 mOhms | 3.7 V | 86 nC | StrongIRFET | |||||
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708
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2 | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.8 mOhms | 2.2 V | 83 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 4.8 mOhms | Enhancement | OptiMOS |