- Manufacture :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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11,755
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 4.8 mOhms | 50 nC | Enhancement | OptiMOS | ||||
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3,109
In-stock
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IR / Infineon | MOSFET 100V 127A 6mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 2 V | 170 nC | Enhancement | ||||
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800
In-stock
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Infineon Technologies | MOSFET 100V 97A 9mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 87 nC | ||||||||
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370,000
In-stock
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Infineon Technologies | MOSFET 100V 127A 6mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | ||||||||
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5,487
In-stock
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IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.8 mOhms | 3.7 V | 86 nC | StrongIRFET | ||||
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GET PRICE |
8,000
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.8 mOhms | 3.7 V | 86 nC | StrongIRFET |
