- Minimum Operating Temperature :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,540
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | ||||||
|
2,775
In-stock
|
Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | ||||
|
786
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.5 mOhms | OptiMOS | |||||||
|
395
In-stock
|
Fairchild Semiconductor | MOSFET N-CH PowerTrench N-Ch PowerTrench Mos | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | ||||||
|
1,389
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS | ||||
|
647
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -120A TO220-3 OptiMOS-P2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 3.5 mOhms | OptiMOS | ||||||||||
|
183
In-stock
|
IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 3.5 mOhms | Enhancement | |||||||
|
394
In-stock
|
Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 183 A | 3.5 mOhms | 3.7 V | 180 nC | Enhancement | StrongIRFET | ||||
|
110
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.5 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||||
|
58
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.5 mOhms | Enhancement | OptiMOS | ||||||
|
984
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.5 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||||
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.5 mOhms | 2 V | 211 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS | ||||
|
VIEW | STMicroelectronics | MOSFET N-channel 55V 3.5m Mosfet | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 120 A | 3.5 mOhms | Enhancement | |||||||
|
904
In-stock
|
onsemi | MOSFET NCH 180A 100V | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.5 mOhms | 2 V | 95 nC | Enhancement | ||||||
|
3
In-stock
|
Fairchild Semiconductor | MOSFET PT7 60V 3.5MOHM TO-220F | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 88 A | 3.5 mOhms | 4 V | 76 nC |