- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,518
In-stock
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Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 10.5 mOhms | 2 V | 35 nC | Enhancement | ||||
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GET PRICE |
14,370
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 120Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 10.5 mOhms | Enhancement | |||||
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12,777
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 13A 10mOhm 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 10.5 mOhms | 1.8 V | 9.5 nC | |||||
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6,303
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -50A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 10.5 mOhms | Enhancement | OptiMOS | |||||
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4,780
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 10.5 mOhms | Enhancement | OptiMOS | |||||
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229
In-stock
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IXYS | MOSFET 188 Amps 200V 0.0105 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 188 A | 10.5 mOhms | HyperFET | ||||||
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1,797
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 27 nC | Enhancement | |||||
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2,584
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 89 A | 10.5 mOhms | 27 nC | Enhancement | |||||
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670
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 120A STripFET II 110A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 10.5 mOhms | Enhancement | ||||||
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6,447
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 11 A | 10.5 mOhms | Enhancement | OptiMOS | |||||
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40,000
In-stock
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IR / Infineon | MOSFET MOSFT 30V 13A 8mOhm 34nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 10.5 mOhms | 2 V | 34 nC | |||||
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3,856
In-stock
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onsemi | MOSFET Single N-Channel 30V,10A,10.5mOhm | SMD/SMT | WDFN-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 10.5 mOhms | |||||||||
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1,659
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 3 V | 27 nC | Enhancement | ||||
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7
In-stock
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IXYS | MOSFET 210 Amps 200V 0.0105 Rds | 20 V | Through Hole | PLUS-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 210 A | 10.5 mOhms | HyperFET | ||||||
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215
In-stock
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Texas instruments | MOSFET 100V 8.7mOhm N-CH Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 10.5 mOhms | 2.8 V | 27 nC | Enhancement | NexFET | |||
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GET PRICE |
5,000
In-stock
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onsemi | MOSFET Single N-Channel 30V,10A,10.5mOhm | SMD/SMT | WDFN-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 10.5 mOhms | ||||||||
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1,600
In-stock
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IR / Infineon | MOSFET MOSFET 75V D2PAK | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 62 A | 10.5 mOhms | 2 V | 130 nC | Enhancement | ||||
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3,000
In-stock
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Vishay Semiconductors | MOSFET 60V Vds 30A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 10.5 mOhms | 2.5 V | 35 nC | Enhancement | ||||
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3,363
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 91 A | 10.5 mOhms | 3 V | 27 nC | Enhancement | ||||
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3,200
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 27 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET MOSFT 20V 15A 7mOhm 28nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 15 A | 10.5 mOhms | 28 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms | 16 V | SMD/SMT | DirectFET-SC | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 10.5 mOhms | 22 nC | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 60V 8.0 mOhm 70A STripFET III | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 70 A | 10.5 mOhms | |||||||
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2,159
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 7mOhms 28nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 15 A | 10.5 mOhms | 28 nC | Enhancement | |||||
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13
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 30 V | 35 A | 10.5 mOhms | Enhancement | OptiMOS |
