- Package / Case :
- Maximum Operating Temperature :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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670
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 120A STripFET II 110A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 10.5 mOhms | Enhancement | ||||||
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1,659
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 3 V | 27 nC | Enhancement | ||||
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7
In-stock
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IXYS | MOSFET 210 Amps 200V 0.0105 Rds | 20 V | Through Hole | PLUS-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 210 A | 10.5 mOhms | HyperFET | ||||||
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215
In-stock
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Texas instruments | MOSFET 100V 8.7mOhm N-CH Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 10.5 mOhms | 2.8 V | 27 nC | Enhancement | NexFET | |||
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13
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 30 V | 35 A | 10.5 mOhms | Enhancement | OptiMOS |
