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16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,958
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.4 mOhms | 2 V | 69 nC | Enhancement | ||||
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2,460
In-stock
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onsemi | MOSFET DPAK 3W SMT PBF | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 40 V | 101 A | 4.4 mOhms | |||||||||||
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2,503
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 0.0039 Ohm 26A STripFET VI DG | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 26 A | 4.4 mOhms | |||||||
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1,950
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.4 mOhms | 37 nC | PowerTrench SyncFET | |||||
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1,317
In-stock
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IR / Infineon | MOSFET MOSFT 30V 21A 3.6mOhm 40nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.4 mOhms | 40 nC | ||||||||
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115
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 40 A | 4.4 mOhms | 1.6 V | 11 nC | Enhancement | |||||
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959
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 4.4 mOhms | 135 nC | OptiMOS | |||||
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761
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.4 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
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122
In-stock
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IR / Infineon | MOSFET MOSFT 20V 20A 4.4mOhm 22nC Qg | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 20 A | 4.4 mOhms | 2.45 V | 33 nC | ||||||||
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241
In-stock
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Texas instruments | MOSFET 60-V N-Channel NexFET Power Mosfet | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.4 mOhms | 2.4 V | 49 nC | Enhancement | NexFET | |||
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20,000
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.4 mOhms | 2.3 V | 68 nC | Enhancement | OptiMOS | |||
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GET PRICE |
12,500
In-stock
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Texas instruments | MOSFET N-Ch NexFET Pwr MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 4.4 mOhms | 1.1 V | 6.2 nC | Enhancement | NexFET | ||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.4 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
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VIEW | IXYS | MOSFET SMPD MOSFETs Power Device | 20 V | SMD/SMT | SMPD-24 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 235 A | 4.4 mOhms | 5 V | 715 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.4 mOhms | 2.3 V | 68 nC | Enhancement | OptiMOS | |||
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124
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.6mOhms 40nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.4 mOhms | 40 nC | Enhancement |
