- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Applied Filters :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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484
In-stock
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IXYS | MOSFET 500V 30A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | HyperFET | |||||
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839
In-stock
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STMicroelectronics | MOSFET N-channel 600 V 0.190ohm 16A Mdmesh | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 200 mOhms | ||||||||||
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2,943
In-stock
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Fairchild Semiconductor | MOSFET TO-220AB N-Ch Power | 10 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 12 A | 200 mOhms | Enhancement | ||||||
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19,920
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 9.7A 200mOhm 16.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 9.7 A | 200 mOhms | 16.7 nC | ||||||||
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2,258
In-stock
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IR / Infineon | MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | - 4 V | 38.7 nC | |||||
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993
In-stock
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Fairchild Semiconductor | MOSFET 120V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 120 V | - 15 A | 200 mOhms | Enhancement | QFET | |||||
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98
In-stock
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Fairchild Semiconductor | MOSFET N-Ch | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 200 mOhms | Enhancement | UniFET | |||||
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536
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 200 mOhms | 47 nC | Enhancement | SIPMOS | ||||
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35
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 62 nC | HyperFET | |||||||
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53
In-stock
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IXYS | MOSFET 30.0 Amps 500V 0.002 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 4.5 V | 240 nC | Enhancement | Linear L2 | |||
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18
In-stock
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IXYS | MOSFET DIODE Id26 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 25 A | 200 mOhms | 5 V | 200 nC | Enhancement | PolarHV, HiPerFET | |||
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192
In-stock
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Fairchild Semiconductor | MOSFET 120V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 120 V | - 15 A | 200 mOhms | Enhancement | QFET | |||||
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2
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 200 mOhms | 4 V | 29 nC | |||||
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20
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 500V 30A | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 4.5 V | 240 nC | Enhancement | Linear L2 | |||
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16
In-stock
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Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 800 V | 38 A | 200 mOhms | 5 V | 195 nC | Enhancement | POWER MOS 7 | |||||
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1,780
In-stock
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STMicroelectronics | MOSFET N-Ch 70V 5A OmniFET | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 70 V | 5 A | 200 mOhms | ||||||||||
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GET PRICE |
7,880
In-stock
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onsemi | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 200 mOhms | Enhancement | |||||
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VIEW | IXYS | MOSFET 30 Amps 500V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | ||||||||||
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VIEW | IXYS | MOSFET 30 Amps 500V | Through Hole | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | ||||||||||
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VIEW | IXYS | MOSFET 20 Amps 600V | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.6 A | 200 mOhms | 3.5 V | Enhancement | CoolMOS | ||||
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VIEW | IXYS | MOSFET DIODE Id26 BVdass500 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 500V 26A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 28 Amps 500 V 0.20 W Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28 A | 200 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 30 Amps 500V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | ||||||||||
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VIEW | IXYS | MOSFET 28 Amps 500V 0.20 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28 A | 200 mOhms | Enhancement | HyperFET | |||||
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468
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2 | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 200 mOhms | 4 V | 29 nC |
