- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,315
In-stock
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STMicroelectronics | MOSFET N-Ch 400 Volt 3.0 A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 3 A | 1.8 Ohms | Enhancement | ||||||
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16,495
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 20V N-Chan | 10 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 240 mA | 1.8 Ohms | 450 mV | Enhancement | |||||
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GET PRICE |
37,000
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 5.2 A Zener SuperMESH | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.2 A | 1.8 Ohms | 40 nC | Enhancement | ||||
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4,980
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K | 20 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 440 mA | 1.8 Ohms | 0.45 nC | Enhancement | |||||
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665
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 800 mA | 1.8 Ohms | Enhancement | ||||||
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794
In-stock
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STMicroelectronics | MOSFET N-Ch 400 Volt 3 Amp Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 3 A | 1.8 Ohms | Enhancement | ||||||
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2,936
In-stock
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Nexperia | MOSFET PMGD290UCEA/SC-88/REEL 7" Q1/T | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 725 mA | 1.8 Ohms | 0.75 V, - 0.8 V | 0.45 nC, 0.76 nC | Enhancement | ||||
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1,046
In-stock
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onsemi | MOSFET NFET TO220FP 600V 4. | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.8 A | 1.8 Ohms | 3 V | 29 nC | Enhancement | ||||
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8,997
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 41V-60V,SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 1.8 Ohms | 800 pC | Enhancement | |||||
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86
In-stock
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onsemi | MOSFET 61V Industrial Load Driver | 12 V | SMD/SMT | SOT-23-3 | - 40 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 mA | 1.8 Ohms | Enhancement | ||||||
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370
In-stock
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onsemi | MOSFET NFET T0220FP 600V 4A 1.8R | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 1.8 Ohms | 4.5 V | 19 nC | ||||||
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4,740
In-stock
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onsemi | MOSFET NFET DPAK 600V 4A 1.8R | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 4.1 A | 1.8 Ohms | 4.5 V | 19 nC | ||||||||
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8,000
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 450 mA | 1.8 Ohms | Enhancement | ||||||
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6,000
In-stock
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onsemi | MOSFET 61V Industrial Load Driver | 12 V | SMD/SMT | SC-70-6 | - 40 C | + 125 C | Reel | 2 Channel | Si | N-Channel | 60 V | 150 mA | 1.8 Ohms | Enhancement | ||||||
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1,725
In-stock
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onsemi | MOSFET NFET IPAK 600V 4A 1.8R | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 4.1 A | 1.8 Ohms | 4.5 V | 19 nC | ||||||||
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2,000
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 450 mA | 1.8 Ohms | Enhancement | ||||||
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970
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.2 A | 1.8 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 900V 6A | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 1.8 Ohms | HyperFET | |||||||||
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828
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 5.2 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.2 A | 1.8 Ohms | 40 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 800 Volt 5.2A Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.2 A | 1.8 Ohms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2.5 A | 1.8 Ohms | ||||||||||
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2,128
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.8 Ohms | 2.5 V | 6 nC | Enhancement | ||||
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1,351
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 2.4A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 1.8 Ohms | 2.5 V | 6.7 nC | Enhancement | ||||
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1,564
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.8 Ohms | 2.5 V | 6 nC | Enhancement | ||||
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81
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 1.8 Ohms | 2.5 V | 6.7 nC | Enhancement | CoolMOS |
