- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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917
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 67 A | 4.5 mOhms | PowerTrench | ||||||
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3,130
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | |||||
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3,290
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 410nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 209 A | 4.5 mOhms | 410 nC | Enhancement | |||||
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333
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 4.3mOhms 87nC | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 87 nC | ||||||||
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678
In-stock
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IR / Infineon | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | ||||||||
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394
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 180A 4.3mOhm 87nC | 16 V | Through Hole | TO-262-3 | Tube | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 87 nC | |||||||||
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294
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | ||||||
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257
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 180A 4.3mOhm 87nC | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 87 nC | ||||||||
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306
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 90A 4.5mOhm 180nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 90 A | 4.5 mOhms | 4 V | 180 nC | |||||
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468
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 64A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 64 A | 4.5 mOhms | 28 nC | Enhancement | OptiMOS | ||||
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141
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 180 A | 4.5 mOhms | 180 nC | Enhancement | |||||
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663
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 150A 32nC 3.8mOhm Qg log lvl | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 4.5 mOhms | 32 nC | ||||||||
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116
In-stock
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Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 209 A | 4.5 mOhms | 410 nC | Enhancement | ||||||
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240
In-stock
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Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | ||||||
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2
In-stock
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IR / Infineon | MOSFET 100V 180A 4.3 mOhm Auto Lgc Lvl MOSFET | 16 V | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 87 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.5 mOhms | OptiMOS | |||||||||
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1,502
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 2.7mOhm 150A STripFET VI | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 30 V | 150 A | 4.5 mOhms | 2.5 V | 42 nC | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 4.5 mOhms | 4 V | 114.6 nC | |||||||
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1
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 140 A | 4.5 mOhms | 1.4 V to 2.3 V | 38 nC | Enhancement |
