MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	STD95N2LH5	1+ $1.490 10+ $1.260 100+ $1.010 500+ $0.883 2500+ $0.681		PDF RFQ	2,525 In-stock	STMicroelectronics	MOSFET N-channel 25V 25V - 0.0037	22 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	25 V	80 A	4.5 mOhms			Enhancement
	DMT6007LFG-7	1+ $0.980 10+ $0.829 100+ $0.637 500+ $0.563 2000+ $0.394		PDF RFQ	1,583 In-stock	Diodes Incorporated	MOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5W	20 V	SMD/SMT	PowerDI3333-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	60 V	80 A	4.5 mOhms	800 mV	41.3 nC	Enhancement
	IPP80N04S3-H4	1+ $1.220 10+ $1.040 100+ $0.797 500+ $0.705	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T		Through Hole	TO-220-3			Tube	1 Channel	Si	N-Channel	40 V	80 A	4.5 mOhms				OptiMOS

STD95N2LH5

STD95N2LH5

STMicroelectronics

MOSFET N-channel 25V 25V - 0.0037

Stock : 2,525

1+: $1.490

10+: $1.260

100+: $1.010

500+: $0.883

2500+: $0.681

DMT6007LFG-7

DMT6007LFG-7

Diodes Incorporated

MOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5W

Stock : 1,583

1+: $0.980

10+: $0.829

100+: $0.637

500+: $0.563

2000+: $0.394

IPP80N04S3-H4

IPP80N04S3-H4

Infineon Technologies

MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T

Stock : 0

1+: $1.220

10+: $1.040

100+: $0.797

500+: $0.705

GET PRICE

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