- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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637
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 2 V | 114.6 nC | Enhancement | |||
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333
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 4.3mOhms 87nC | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 87 nC | |||||||
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394
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 180A 4.3mOhm 87nC | 16 V | Through Hole | TO-262-3 | Tube | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 87 nC | ||||||||
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257
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 180A 4.3mOhm 87nC | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 87 nC | |||||||
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141
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 180 A | 4.5 mOhms | 180 nC | Enhancement | ||||
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2
In-stock
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IR / Infineon | MOSFET 100V 180A 4.3 mOhm Auto Lgc Lvl MOSFET | 16 V | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 87 nC |
