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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,290
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 410nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 209 A | 4.5 mOhms | 410 nC | Enhancement | ||||
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294
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | |||||
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306
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 90A 4.5mOhm 180nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 90 A | 4.5 mOhms | 4 V | 180 nC | ||||
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116
In-stock
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Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 209 A | 4.5 mOhms | 410 nC | Enhancement |
