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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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678
In-stock
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IR / Infineon | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | |||||||||
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257
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 180A 4.3mOhm 87nC | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 87 nC | |||||||||
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240
In-stock
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Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.5 mOhms | OptiMOS | ||||||||||
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1,502
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 2.7mOhm 150A STripFET VI | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 30 V | 150 A | 4.5 mOhms | 2.5 V | 42 nC | ||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 4.5 mOhms | 4 V | 114.6 nC |