- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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992
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 3 mOhms | OptiMOS | |||||||||
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5,909
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0025 mOhm typ., 80 A STripFET(TM) VI... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3 mOhms | 2 V | 40 nC | Enhancement | ||||
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492
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 79A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 79 A | 3 mOhms | 47 nC | Enhancement | OptiMOS | ||||
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288
In-stock
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onsemi | MOSFET NFET TO220 60V 2.5A 300 | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 98 A | 3 mOhms | ||||||||
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VIEW | IXYS | MOSFET 340 Amps 60V 0.003 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 340 A | 3 mOhms | Enhancement | HyperFET | |||||
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728
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 40V 56A DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 3 mOhms | 2.2 V to 3.9 V | 65 nC | StrongIRFET |
