- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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276
In-stock
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IXYS | MOSFET 500V 132A 0.039Ohm PolarP3 Power MOSFET | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 132 A | 39 mOhms | 5 V | 250 nC | HyperFET | |||||||
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1,769
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43.5 A | 39 mOhms | Enhancement | QFET | ||||||
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1,192
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 4 V | 37 nC | Enhancement | |||||
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303
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS N-Ch 100V 48A 3-Pin 3+Tab | 25 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 48 A | 39 mOhms | Enhancement | |||||||
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32
In-stock
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IXYS | MOSFET 500V 112A 0.039Ohm PolarP3 Power MOSFET | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 500 V | 112 A | 39 mOhms | 5 V | 250 nC | HyperFET | |||||||
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919
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 5.4 A | 39 mOhms | 37 nC | Enhancement | ||||||
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630
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 31A 39mOhm 37nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 37 nC | |||||||||
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181
In-stock
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IXYS | MOSFET 32 Amps 50V 0.036 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | - 4.5 V | 46 nC | Enhancement | TrenchP | ||||
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355
In-stock
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IXYS | MOSFET 32 Amps 50V 0.036 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | Enhancement | |||||||
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60
In-stock
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IXYS | MOSFET 76 Amps 250V 39 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 76 A | 39 mOhms | Enhancement | |||||||
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28
In-stock
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IXYS | MOSFET TrenchP Power MOSFET | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | ||||||||||||
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25
In-stock
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IXYS | MOSFET 76 Amps 250V 39 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 76 A | 39 mOhms | Enhancement |