- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
41 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,492
In-stock
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IXYS | MOSFET HiPERFET Id26 BVdass500 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | Enhancement | HyperFET | |||||
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83
In-stock
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IXYS | MOSFET -40.0 Amps -500V 0.230 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 40 A | 230 mOhms | |||||||
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3,635
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 230 mOhms | 3 V to 4 V | 20 nC | Enhancement | CoolMOS | |||
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9,201
In-stock
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Diodes Incorporated | MOSFET 30V P-Chnl HDMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 230 mOhms | Enhancement | ||||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 44 nC | Enhancement | CoolMOS | |||
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1,261
In-stock
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STMicroelectronics | MOSFET N-ch 500 Volt 17Amp Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 17 A | 230 mOhms | 85 nC | Enhancement | |||||
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163
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||
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1,223
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 16 A | 230 mOhms | Enhancement | QFET | |||||
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13,782
In-stock
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Fairchild Semiconductor | MOSFET 500V NCH UNIFET MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 230 mOhms | Enhancement | ||||||
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561
In-stock
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Fairchild Semiconductor | MOSFET 500V 20A NCH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 230 mOhms | Enhancement | ||||||
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2,100
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -8.8A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.83 A | 230 mOhms | - 4 V | - 13 nC | Enhancement | SIPMOS | |||
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2,854
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 230 mOhms | Enhancement | ||||||
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80
In-stock
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IXYS | MOSFET -40.0 Amps -500V 0.230 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 40 A | 230 mOhms | |||||||
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855
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 16 A | 230 mOhms | 3 V | 29 nC | Enhancement | ||||
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50
In-stock
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IXYS | MOSFET 38 Amps 1000V 0.21 Rds | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 29 A | 230 mOhms | Enhancement | HyperFET | |||||
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315
In-stock
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Fairchild Semiconductor | MOSFET 500V N-CH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 230 mOhms | Enhancement | ||||||
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190
In-stock
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Fairchild Semiconductor | MOSFET 500V NCH | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 230 mOhms | Enhancement | UniFET | |||||
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8,920
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -8.8A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 8.8 A | 230 mOhms | - 4 V | 15 nC | Enhancement | SIPMOS | |||
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3,960
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET 20Vdss 2.0A 7A 600mW | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 230 mOhms | 500 mV | 2.3 nC | Enhancement | ||||
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31
In-stock
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IXYS | MOSFET -40.0 Amps -500V 0.230 Rds | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 500 V | - 40 A | 230 mOhms | - 4 V | 205 nC | Enhancement | PolarP | ||||
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8,783
In-stock
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Infineon Technologies | MOSFET P-Ch 30V -1.5A SOT-363-3 | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 230 mOhms | - 2 V | - 0.7 nC | Enhancement | ||||
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24
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 21 A | 230 mOhms | 3.5 V to 6.5 V | 230 nC | HyperFET | ||||
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47
In-stock
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IXYS | MOSFET 26.0 Amps 500 V 0.23 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | Enhancement | ||||||
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353
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -8.8A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.83 A | 230 mOhms | - 4 V | - 13 nC | Enhancement | ||||
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369
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -8.8A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 8.8 A | 230 mOhms | - 4 V | 15 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 44 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.23 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | 5.5 V | 65 nC | Enhancement | PolarHV | |||
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VIEW | Infineon Technologies | MOSFET P-Ch -60V -8.8A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.83 A | 230 mOhms | - 4 V | - 13 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 30V P Chnl HDMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 230 mOhms | Enhancement |
