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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRF1404ZPBF
1+
$1.000
10+
$1.000
100+
$1.000
500+
$1.000
RFQ
12,000
In-stock
Infineon Technologies MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 180 A 2.7 mOhms 4 V 100 nC  
STP310N10F7
1+
$6.280
10+
$5.340
100+
$4.630
250+
$4.390
RFQ
432
In-stock
STMicroelectronics MOSFET N-Ch 100V 2.7 mOhm 180A STripFET VII 20 V Through Hole TO-220-3     Tube   Si N-Channel 100 V 180 A 2.7 mOhms   180 nC  
AUIRF1404ZS
1+
$2.760
10+
$2.340
100+
$1.870
250+
$1.780
RFQ
2,926
In-stock
IR / Infineon MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms 20 V SMD/SMT TO-263-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 180 A 2.7 mOhms 2 V 150 nC Enhancement
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