- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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11,946
In-stock
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STMicroelectronics | MOSFET N-channel 80 V 3.5 mOhm typ 90 A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.3 mOhms | 4.5 V | 96 nC | ||||
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389
In-stock
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Fairchild Semiconductor | MOSFET 80V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 270 A | 4.3 mOhms | 2 V | 178 nC | Enhancement | |||
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150
In-stock
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Toshiba | MOSFET 80V N-Ch PWR FET 157A 192W 81nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 80 V | 157 A | 4.3 mOhms | 81 nC | ||||||||
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1,000
In-stock
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STMicroelectronics | MOSFET Nchanl 80 V 0035 Ohm typ 64 A Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 64 A | 4.3 mOhms | 4.5 V | 96 nC |
