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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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11,946
In-stock
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STMicroelectronics | MOSFET N-channel 80 V 3.5 mOhm typ 90 A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.3 mOhms | 4.5 V | 96 nC | |||||
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18,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 2 V | 43 nC | Enhancement | OptiMOS | |||
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5,230
In-stock
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Texas instruments | MOSFET 40-V, N-Chanel NxFT Pwr MOSFETs | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.3 mOhms | 1.8 V | 52 nC | NexFET | ||||
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150
In-stock
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Toshiba | MOSFET 80V N-Ch PWR FET 157A 192W 81nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 80 V | 157 A | 4.3 mOhms | 81 nC | |||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 2 V | 43 nC | Enhancement | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET Nchanl 80 V 0035 Ohm typ 64 A Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 64 A | 4.3 mOhms | 4.5 V | 96 nC | |||||
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890
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 4 V | 65 nC | Enhancement |
