- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Tradename :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
800
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 31 A | 1.9 mOhms | Enhancement | PowerTrench | ||||||
|
33,000
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 30 V | 125 W | 1.9 mOhms | 1.7 V | 40 nC | Enhancement | ||||||
|
27,280
In-stock
|
Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.9 mOhms | 1.1 V | 30 nC | Enhancement | NexFET | ||||
|
4,800
In-stock
|
Infineon Technologies | MOSFET MOSF N CH 30V 34A DIRECTFET MT | 20 V | SMD/SMT | DirectFET-MT | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 192 A | 1.9 mOhms | 1.7 V | 51 nC | Directfet | |||||
|
VIEW | Fairchild Semiconductor | MOSFET 30V N-Channel PwrTrch MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 1.9 mOhms | Enhancement | PowerTrench |