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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,560
In-stock
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Fairchild Semiconductor | MOSFET 100V PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 16 A | 122 mOhms | 4 V | 14.4 nC | |||||
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1,363
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Ch UltraFET PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 2.8 A | 122 mOhms | Enhancement | UltraFET | |||||
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1,110
In-stock
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onsemi | MOSFET 60V 9A N-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 9 A | 122 mOhms | Enhancement | ||||||
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1
In-stock
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onsemi | MOSFET NFET DPAK 60V .150R TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 9 A | 122 mOhms | 3 V | 7.1 nC | |||||
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97
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.9 A | 122 mOhms | 3 V | 14.9 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET N-Ch FET 30V 1.6A 1V 500mW | UF6-6 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 1.6 A, - 1.4 A | 122 mOhms |
