Build a global manufacturer and supplier trusted trading platform.
Package / Case :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
SQP120N10-3m8_GE3
1+
$4.070
10+
$3.270
100+
$2.980
250+
$2.690
RFQ
481
In-stock
Siliconix / Vishay MOSFET N-Channel 100V AEC-Q101 Qualified +/- 20 V Through Hole TO-220-3 - 55 C + 175 C   1 Channel Si N-Channel 100 V 120 A 0.003 Ohms 2.5 V 190 nC Enhancement TrenchFET
SQP100N04-3m6_GE3
1+
$1.790
10+
$1.440
100+
$1.150
500+
$1.010
VIEW
RFQ
Siliconix / Vishay MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified +/- 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 100 A 0.003 Ohms 2.5 V 135 nC Enhancement  
SQV120N10-3M8_GE3
500+
$1.970
1000+
$1.670
2500+
$1.590
5000+
$1.460
VIEW
RFQ
Siliconix / Vishay MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified +/- 20 V Through Hole TO-262-3 - 55 C + 175 C   1 Channel Si N-Channel 100 V 120 A 0.003 Ohms 2.5 V 190 nC Enhancement TrenchFET
Page 1 / 1