- Vgs - Gate-Source Voltage :
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12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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45,200
In-stock
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Infineon Technologies | MOSFET MOSFET_(20V 40V) | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 167 W | N-Channel | 40 V | 200 A | 900 uOhms | 2.8 V | 99 nC | HSOF-5 | 2000 | Green available | |||||||||||
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20,446
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 900 uOhms | 1.2 V | 96 nC | Enhancement | OptiMOS | ||||||||
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10,906
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 900 uOhms | 1.2 V | 78 nC | Enhancement | OptiMOS | ||||||||
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3,733
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 900 uOhms | 1.2 V | 122 nC | Enhancement | |||||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 900 uOhms | 1.2 V | 78 nC | Enhancement | OptiMOS | ||||||||
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988
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 900 uOhms | 1.2 V | 90 nC | Enhancement | |||||||||
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385
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 900 uOhms | 2 V | 225 nC | Enhancement | OptiMOS | ||||||||
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1,900
In-stock
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Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 900 uOhms | 1.5 V | 220 nC | Enhancement | |||||||||
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2,000
In-stock
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Vishay Semiconductors | MOSFET 40V Vds 160A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 900 uOhms | 1.5 V | 220 nC | Enhancement | |||||||||
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900
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 900 uOhms | 2 V | 225 nC | Enhancement | |||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 900 uOhms | 1.2 V | 122 nC | Enhancement | OptiMOS | ||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 900 uOhms | 1.2 V | 96 nC | Enhancement | OptiMOS |