- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,660
In-stock
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Siliconix / Vishay | MOSFET 80V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 50 A | 0.02 Ohms | - 2.5 V | 137 nC | Enhancement | TrenchFET | |||
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12,500
In-stock
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Vishay Semiconductors | MOSFET 30V 8A 3W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 0.02 Ohms | 1.5 V | 14.5 nC | Enhancement | TrenchFET | |||
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47,999
In-stock
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Vishay Semiconductors | MOSFET 40V 16A 62.5W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 16 A | 0.02 Ohms | - 2.5 V | 21.2 nC | Enhancement | TrenchFET | |||
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6,000
In-stock
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Siliconix / Vishay | MOSFET P-Channel 20V TSOP-6 | +/- 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8 A | 0.02 Ohms | - 1 V | 52.2 nC | Enhancement | ||||
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VIEW | Siliconix / Vishay | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 16 A | 0.02 Ohms | - 2.5 V | 21.2 nC | Enhancement |
