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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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302
In-stock
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onsemi | MOSFET NFET 2X2 30V 7.8A 33mOhm | 12 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 20.3 mOhms | Enhancement | ||||||
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963
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20.3 mOhms | 1.2 V | 39 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20.3 mOhms | 1.2 V | 39 nC | Enhancement |
