- Mounting Style :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
25 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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48,946
In-stock
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Nexperia | MOSFET 60V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 265 mA | 2.8 Ohms | 600 mV | 490 pC | Enhancement | |||||
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31,364
In-stock
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onsemi | MOSFET 20V Trench N-Channel | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 220 mA | 2.8 Ohms | Enhancement | |||||||
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7,467
In-stock
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Nexperia | MOSFET N-CH DMOS 240V 375MA | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 375 mA | 2.8 Ohms | Enhancement | |||||||
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3,540
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 2.3Amp Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.3 A | 2.8 Ohms | 11 nC | Enhancement | ||||||
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8,206
In-stock
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Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 375 mA | 2.8 Ohms | Enhancement | |||||||
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3,900
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 2.8 Ohms | 4 V | 9.5 nC | ||||||
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36,021
In-stock
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Nexperia | MOSFET Single N-Channel 60V 300mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.8 Ohms | 0.2 nC | Enhancement | ||||||
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2,464
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 1.9A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1.9 A | 2.8 Ohms | 3 V | 12 nC | CoolMOS | |||||
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6,479
In-stock
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Nexperia | MOSFET Single N-Channel 60V 300mA | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 2.8 Ohms | 0.5 nC | |||||||
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8,622
In-stock
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Diodes Incorporated | MOSFET 30V DUAL N-CH MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 260 mA | 2.8 Ohms | 1.5 V | 0.87 nC | Enhancement | |||||
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696
In-stock
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Fairchild Semiconductor | MOSFET 400V N-CH MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 2 A | 2.8 Ohms | Enhancement | |||||||
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46,798
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 380 mA | 2.8 Ohms | 800 mV | 900 pC | Enhancement | |||||
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6,804
In-stock
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Nexperia | MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 200 mA | 2.8 Ohms | 0.55 nC | |||||||
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1,862
In-stock
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onsemi | MOSFET NCH 200V 0.5A 4V DRIVE | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 500 mA | 2.8 Ohms | 1.2 V | 2.4 nC | Enhancement | |||||
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190
In-stock
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IXYS | MOSFET 5 Amps 1000V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 5 A | 2.8 Ohms | HyperFET | |||||||
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790
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 2.8 Ohms | 4 V | 9.5 nC | ||||||
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350,200
In-stock
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Nexperia | MOSFET 30V 230 MA P-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 230 mA | 2.8 Ohms | - 0.9 V | 0.55 nC | Enhancement | |||||
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806
In-stock
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Nexperia | MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 220 mA | 2.8 Ohms | - 0.9 V | 0.55 nC | Enhancement | ||||||
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5,661
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 2.8 Ohms | 1.5 V | 0.9 nC | Enhancement | |||||
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5,698
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 380 mA | 2.8 Ohms | 800 mV | 900 pC | Enhancement | |||||
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20
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 5 A | 2.8 Ohms | 4 V | 43 nC | Enhancement | |||||||
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1,000
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 2.8 Ohms | Enhancement | |||||||
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VIEW | IXYS | MOSFET Polar Power MOSFET HiPerFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 5 A | 2.8 Ohms | 6 V | 33.4 nC | Enhancement | Polar, HiPerFET | |||||
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VIEW | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 2.8 Ohms | 1.5 V | 0.9 nC | Enhancement | |||||
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915
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 2.8 Ohms | 4 V | 9.5 nC |