- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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3,990
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 30V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.3 mOhms | 2.35 V | 50 nC | |||||
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940
In-stock
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Infineon Technologies | MOSFET 30V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 247 A | 1.95 mOhms | 2.35 V | 55 nC | |||
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1,282
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.7mOhms 8.1nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 13 mOhms | 2.35 V | 8.1 nC | |||
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508
In-stock
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IR / Infineon | MOSFET 30V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 160 A | 1.6 mOhms | 2.35 V | 55 nC | |||
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1,720
In-stock
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IR / Infineon | MOSFET MOSFT 85A 5.8mOhm 30V 15nC Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 5.8 mOhms | 2.35 V | 15 nC | |||||
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1,951
In-stock
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IR / Infineon | MOSFET MOSFT 58A 8.9mOhm 30V 10nC Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58 A | 8.9 mOhms | 2.35 V | 10 nC | |||||
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636
In-stock
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IR / Infineon | MOSFET MOSFT 30V 160A 39nC 3.1mOhm Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.1 mOhms | 2.35 V | 39 nC |
