- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.1 Ohms (4)
- 1.22 Ohms (1)
- 1.8 mOhms (2)
- 100 mOhms (2)
- 120 mOhms (1)
- 2.4 Ohms (1)
- 2.7 mOhms (2)
- 250 mOhms (7)
- 280 mOhms (1)
- 3.6 mOhms (2)
- 390 mOhms (9)
- 4 mOhms (1)
- 5.2 mOhms (2)
- 5.6 mOhms (1)
- 5.8 mOhms (2)
- 560 mOhms (6)
- 6.5 mOhms (2)
- 6.6 mOhms (1)
- 7.3 mOhms (1)
- 7.6 mOhms (1)
- 77 mOhms (2)
- 780 mOhms (4)
- 800 mOhms (1)
- 81 mOhms (2)
- 9.8 mOhms (1)
- Tradename :
59 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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277
In-stock
|
Infineon Technologies | MOSFET N-Ch 850V 54.9A TO247-3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 54.9 A | 77 mOhms | 2.1 V | 288 nC | Enhancement | |||||
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307
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 34.6A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 34.6 A | 81 mOhms | 2.1 V | 200 nC | Enhancement | CoolMOS | ||||
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299
In-stock
|
Infineon Technologies | MOSFET N-Ch 850V 54.9A TO247-3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 54.9 A | 77 mOhms | 2.1 V | 288 nC | Enhancement | CoolMOS | ||||
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1,709
In-stock
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IR / Infineon | MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 7.3 mOhms | 2.1 V | 44 nC | Enhancement | StrongIRFET | ||||
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838
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 8A I2PAK-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | ||||
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216
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | ||||
|
138
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | ||||
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382
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | ||||
|
15,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 8A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | ||||
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356
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.8 mOhms | 2.1 V | 124 nC | Enhancement | |||||
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838
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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685
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | |||||
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579
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS | ||||
|
394
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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594
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 21A TO220FP-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 21 A | 100 mOhms | 2.1 V | - | Enhancement | SIPMOS | ||||
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498
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 6A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS | ||||
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908
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 5.2 mOhms | 2.1 V | 32 nC | Enhancement | |||||
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89
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 34.6A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 34.6 A | 81 mOhms | 2.1 V | 200 nC | Enhancement | CoolMOS | ||||
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404
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 6.5 mOhms | 2.1 V | 187 nC | Enhancement | |||||
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466
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | ||||
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243
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.8 mOhms | 2.1 V | 124 nC | Enhancement | OptiMOS | ||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | |||||
|
50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | ||||
|
499
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | |||||
|
494
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | ||||
|
450
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 1.22 Ohms | 2.1 V | 23 nC | Enhancement | CoolMOS | ||||
|
767
In-stock
|
IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 71 A | 6.6 mOhms | 2.1 V | 87 nC | Enhancement | StrongIRFET | ||||
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492
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
|
398
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS | ||||
|
448
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 16.7 A | 250 mOhms | 2.1 V | 91 nC | Enhancement | CoolMOS |