- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.4 Ohms (2)
- 1.5 Ohms (1)
- 1.6 mOhms (2)
- 10 mOhms (1)
- 11.7 mOhms (1)
- 12 mOhms (2)
- 150 mOhms (1)
- 198 mOhms (1)
- 2 Ohms (3)
- 2.2 mOhms (1)
- 2.5 Ohms (1)
- 2.8 Ohms (1)
- 21 mOhms (1)
- 250 mOhms (1)
- 3 Ohms (2)
- 30 mOhms (4)
- 300 mOhms, 425 mOhms (1)
- 36 mOhms (1)
- 385 mOhms (2)
- 5 mOhms (1)
- 520 mOhms (1)
- 6.4 mOhms (1)
- 63 mOhms (2)
- 68 mOhms (1)
- 80 mOhms (1)
- 9.3 mOhms (1)
- 92 mOhms (1)
- Qg - Gate Charge :
38 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
865,500
In-stock
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onsemi | MOSFET NFET SOT23 60V 310mA 2.5Ohms | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | N-Channel | 60 V | 310 mA | 2.5 Ohms | 1 V | 810 pC | SOT-23 | 3000 | Green available | |||||||||
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5,417
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 35 A | 11.7 mOhms | 1 V | 37 nC | Enhancement | PowerTrench | ||||||
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2,469
In-stock
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Fairchild Semiconductor | MOSFET PT7 N-ch 60/20V Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 56 A | 5 mOhms | 1 V | 63 nC | PowerTrench Power Clip | |||||||
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3,074
In-stock
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Diodes Incorporated | MOSFET 60V UMOS H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 60 V | 1.8 A | 300 mOhms, 425 mOhms | 1 V | 3.2 nC, 5.1 nC | Enhancement | |||||||
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2,178
In-stock
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Infineon Technologies | MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 305 A | 2.2 mOhms | 1 V | 172 nC | Enhancement | StrongIRFET | ||||||
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3,806
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 60 V, 19 mOhm typ., 24 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 24 A | 30 mOhms | 1 V | 26 nC | Enhancement | |||||||
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1,165
In-stock
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Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | ||||||
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706
In-stock
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Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | ||||||
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2,500
In-stock
|
Diodes Incorporated | MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 10 mOhms | 1 V | 47.1 nC | Enhancement | |||||||
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2,023
In-stock
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Fairchild Semiconductor | MOSFET PT5 100/20V Nch PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.6 A | 198 mOhms | 1 V | 3.8 nC | Enhancement | PowerTrench | ||||||
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4,665
In-stock
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Diodes Incorporated | MOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.9 A | 80 mOhms | 1 V | 5.8 nC | Enhancement | |||||||
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3,023
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 150 mOhms | 1 V | 5.8 nC | Enhancement | |||||||
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2,300
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13.5 A | 6.4 mOhms | 1 V | 41.3 nC | Enhancement | |||||||
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2,431
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 70A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 70 A | 12 mOhms | 1 V | 41.3 nC | Enhancement | |||||||
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2,605
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 mA | 3 Ohms | 1 V | 0.45 nC | Enhancement | |||||||
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2,751
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 60V N-CHAN | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 5.6 A | 68 mOhms | 1 V | 10.3 nC | Enhancement | |||||||
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4,431
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5.5 A | 30 mOhms | 1 V | 22.4 nC | Enhancement | |||||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 60V N-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 30 mOhms | 1 V | 22.4 nC | Enhancement | |||||||
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309
In-stock
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Diodes Incorporated | MOSFET 60V IntelliFET Over Current Ctrl | SMD/SMT | SOT-223-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.6 A | 385 mOhms | 1 V | Enhancement | IntelliFET | ||||||||
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12,496
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 30 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 mA | 1.5 Ohms | 1 V | 821 pC | Enhancement | |||||||
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1,156
In-stock
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Diodes Incorporated | MOSFET 60V LO INPT CURR SELF PROT LO SD SWCH | - | SMD/SMT | SOT-223-3 | - 40 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.1 A | 520 mOhms | 1 V | - | Enhancement | IntelliFET | ||||||
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2,402
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 12 mOhms | 1 V | 17 nC | Enhancement | |||||||
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1,000
In-stock
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Diodes Incorporated | MOSFET 60V IntelliFET N-CHN W/STATUS PIN | SMD/SMT | SOT-223-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.6 A | 385 mOhms | 1 V | Enhancement | IntelliFET | ||||||||
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5,064
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF | 20 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.4 Ohms | 1 V | 0.55 nC | Enhancement | |||||||
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1,740
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vgss 25A Idm | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 18 A | 63 mOhms | 1 V | 14 nC | Enhancement | |||||||
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229
In-stock
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-89-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 250 mOhms | 1 V | 3.2 nC | Enhancement | |||||||||
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525
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 10A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.6 A | 92 mOhms | 1 V | 8.6 nC | Enhancement | |||||||
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1,873
In-stock
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Diodes Incorporated | MOSFET 60V Dual N-Ch Enh 7.5Ohm 5V Vgs 0.23A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 380 mA | 2 Ohms | 1 V | 300 pC | Enhancement | |||||||
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722
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5.3 A | 30 mOhms | 1 V | 22.4 nC | Enhancement | |||||||
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6,148
In-stock
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Nexperia | MOSFET 2N7002/TO-236AB/REEL 11" Q3/T4 | 30 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 2.8 Ohms | 1 V | Enhancement |
