- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 0.0008 Ohms (1)
- 0.00646 Ohms (1)
- 1.1 mOhms (1)
- 1.6 mOhms (1)
- 1.8 mOhms (1)
- 2 mOhms (2)
- 2.4 mOhms (2)
- 2.9 mOhms (2)
- 20 mOhms (1)
- 21 mOhms (1)
- 26 mOhms (1)
- 3.5 mOhms (1)
- 3.9 mOhms (1)
- 3.95 mOhms (1)
- 46 mOhms (1)
- 5 mOhms (1)
- 500 uOhms (1)
- 600 uOhms (1)
- 7.3 mOhms (1)
- 9 mOhms (2)
- 95 mOhms (1)
- 970 uOhms (1)
- Tradename :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
86,000
In-stock
|
ROHM Semiconductor | MOSFET 40V N-CHANNEL DUAL | - 20 V, + 20 V | Tape & Reel (TR) | 2.5 W | N-Channel | 40 V | 6.5 A | 46 mOhms | 1 V | 2.6 nC | TSMT-8 | 3000 | Green available | ||||||||||
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933
In-stock
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Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 557 A | 500 uOhms | 1 V | 307 nC | Enhancement | StrongIRFET | ||||||||
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100
In-stock
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Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 478 A | 600 uOhms | 1 V | 267 nC | Enhancement | StrongIRFET | ||||||||
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5,263
In-stock
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IR / Infineon | MOSFET 40V, 375A, .59 mOhm 220 nC Qg, Logic Lvl | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 564 A | 970 uOhms | 1 V | 220 nC | Enhancement | StrongIRFET | |||||||
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4,416
In-stock
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Fairchild Semiconductor | MOSFET 40/20V 550A NChnl LL Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.3 mOhms | 1 V | 30 nC | Enhancement | ||||||||
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5,845
In-stock
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Fairchild Semiconductor | MOSFET 40V 80A NChnl Logic Level Power Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.9 mOhms | 1 V | 83 nC | Enhancement | PowerTrench | |||||||
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1,600
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 2 mOhms | 1 V | 186 nC | Enhancement | PowerTrench | |||||||
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GET PRICE |
13,472
In-stock
|
Infineon Technologies | MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 414 A | 1.6 mOhms | 1 V | 180 nC | Enhancement | StrongIRFET | ||||||
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2,775
In-stock
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Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | |||||||
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GET PRICE |
4,483
In-stock
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IR / Infineon | MOSFET 40V Single N-Channel HEXFET | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 209 A | 2 mOhms | 1 V | 76 nC | Enhancement | StrongIRFET | ||||||
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2,846
In-stock
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IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | |||||||
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1,550
In-stock
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IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | |||||||
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3,500
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 13.7 A | 21 mOhms | 1 V | 12.9 nC | Enhancement | ||||||||
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466
In-stock
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IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 16 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 500 A | 1.1 mOhms | 1 V | 177 nC | Enhancement | ||||||||
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507
In-stock
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Fairchild Semiconductor | MOSFET 40V 100A N-Chnl Pwr Trench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1 V | 96 nC | Enhancement | PowerTrench | |||||||
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6,373
In-stock
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Nexperia | MOSFET 40V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2.1 A | 95 mOhms | 1 V | 3.6 nC | Enhancement | ||||||||
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2,163
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET 20Vgss 1.6W 1181pF | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 28 A | 20 mOhms | 1 V | 9.6 nC | Enhancement | ||||||||
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1,474
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12.2 A | 26 mOhms | 1 V | 9.2 nC | Enhancement | ||||||||
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542
In-stock
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IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 3.9 mOhms | 1 V | 56 nC | Enhancement | ||||||||
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795
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.8 mOhms | 1 V | 181 nC | Enhancement | ||||||||
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1,014
In-stock
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Fairchild Semiconductor | MOSFET PT8 N-ch40VLLDualNch PowerTrench MOSFET | 20 V | SMD/SMT | PQFN-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 98 A | 3.95 mOhms | 1 V | 40 nC | Enhancement | Power Clip | |||||||
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7,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch Enh 20Vgss 7.3mOhm 70A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5 mOhms | 1 V | 29.1 nC | Enhancement | ||||||||
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2,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 40V PowerPAK 8x8L | + 20 V, - 16 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0008 Ohms | 1 V | 420 nC | Enhancement | ||||||||
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6,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 40V PowerPAK ChipFET | + 20 V, - 16 V | SMD/SMT | PowerPAK-ChipFET-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 25 A | 0.00646 Ohms | 1 V | 40 nC | Enhancement | ||||||||
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38
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 6.5mOhms 66.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 110 A | 9 mOhms | 1 V | 66.7 nC | Enhancement | ||||||||
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29
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET PWR MOSFET 6.5mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 9 mOhms | 1 V | 100 nC | Enhancement |
