- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,967
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 59 A | 10 mOhms | 1.4 V | 33.5 nC | Enhancement | |||||
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6,000
In-stock
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Toshiba | MOSFET N-Ch 40V 1570pF 24.4nC 50A 36W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 72 A | 5.4 mOhms | 1.4 V | 24 nC | Enhancement | ||||||
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492
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 3-DDPAK/TO... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.4 mOhms | 1.4 V | 153 nC | Enhancement | |||||
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350
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.4 mOhms | 1.4 V | 153 nC | Enhancement | NexFET | ||||
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14,788
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 6 mOhms | 1.4 V | 27 nC | Enhancement | |||||
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2,392
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | Si | N-Channel | 40 V | 150 A | 850 uOhms | 1.4 V | 103 nC | Enhancement | ||||||
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4,096
In-stock
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Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=170W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 45 V | 150 A | 1.7 mOhms | 1.4 V | 99 nC | Enhancement | |||||
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2,089
In-stock
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Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=132W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 150 A | 2.1 mOhms | 1.4 V | 74 nC | Enhancement | |||||
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690
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 1.4 V | 41 nC | Enhancement | |||||
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9,600
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 92 A | 6 mOhms | 1.4 V | 27 nC | Enhancement |