- Manufacture :
- Vgs - Gate-Source Voltage :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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15,668
In-stock
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Nexperia | MOSFET 30V N-Channel Trench MOSFET | 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 900 mA | 390 mOhms | 450 mV | 1.3 nC | Enhancement | |||
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16,495
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 20V N-Chan | 10 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 240 mA | 1.8 Ohms | 450 mV | Enhancement | ||||
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5,913
In-stock
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onsemi | MOSFET 20 V SANYO T6 NCH IN | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.6 A | 18 mOhms | 450 mV | 17.8 nC | Enhancement | |||
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1,774
In-stock
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Nexperia | MOSFET PMV28UNEA/TO-236AB/REEL 7" Q3/ | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.7 A | 24 mOhms | 450 mV | 10 nC | Enhancement | |||
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4,319
In-stock
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Nexperia | MOSFET PMF63UNE/SC-70/REEL 7" Q1/T1 * | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.2 A | 57 mOhms | 450 mV | 5.85 nC | Enhancement | |||
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3,290
In-stock
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onsemi | MOSFET NFET SC75 20V 915MA 230MO | 6 V | SMD/SMT | SOT-416-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 915 mA | 127 mOhms | 450 mV | 1.82 nC | Enhancement | |||
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8,370
In-stock
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onsemi | MOSFET NFET SC75 20V 915MA | 6 V | SMD/SMT | SOT-416-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.3 A | 127 mOhms | 450 mV | 1.82 nC | Enhancement | |||
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14,459
In-stock
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Nexperia | MOSFET 30V Dual N-Channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 590 mA | 670 mOhms | 450 mV | 1.05 mC | Enhancement | |||
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2,668
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET VL Gate 1.0V | 12 V | SMD/SMT | U-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 900 mA | 350 mOhms | 450 mV | 500 pC | Enhancement | |||
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2,351
In-stock
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Diodes Incorporated | MOSFET 20V Dual N-Ch Enh 200mOhm 8V VGSS | 8 V, 8 V | SMD/SMT | X2-DFN1310-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 2.11 A, 2.11 A | 195 mOhms | 450 mV | 1.6 nC | Enhancement | |||
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236,500
In-stock
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Nexperia | MOSFET PMV65UNE/TO-236AB/REEL 7 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.4 A | 63 mOhms | 450 mV | 6 nC | Enhancement | |||
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20,000
In-stock
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Nexperia | MOSFET 20V N-Channel Trench MOSFET | 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 270 mOhms | 450 mV | 1.4 nC | Enhancement | |||
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13,840
In-stock
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Nexperia | MOSFET 30V N-Channel Trench MOSFET | 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 900 mA | 390 mOhms | 450 mV | 1.3 nC | Enhancement | |||
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10,000
In-stock
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Nexperia | MOSFET 20V Single N-channel Trench MOSFET | 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1 A | 290 mOhms | 450 mV | 1.2 nC | Enhancement | |||
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20,000
In-stock
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Nexperia | MOSFET Trench Mosfet 20V, N-channel | 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 600 mA | 470 mOhms | 450 mV | 0.4 nC | Enhancement | |||
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2,995
In-stock
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onsemi | MOSFET NFET SC89 20V 915MA 230MO | 6 V | SMD/SMT | SC-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 915 mA | 127 mOhms | 450 mV | 1.82 nC | Enhancement | |||
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3,000
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 1.0V Max 0.4W Pd | 12 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 900 mA | 350 mOhms | 450 mV | 500 pC | Enhancement |
