- Vgs - Gate-Source Voltage :
- Package / Case :
-
- CST3-3 (1)
- CST3C-3 (1)
- DFN1010D-3 (1)
- DFN2020-6 (1)
- MicroFET-6 (1)
- PowerDI3333-8 (6)
- PowerPAK-1212-8 (2)
- SO-8 (11)
- SOIC-8 (1)
- SOT-223-3 (3)
- SOT-23-3 (10)
- SOT-323-3 (2)
- SOT-363-6 (1)
- SSOT-3 (1)
- TO-252-3 (10)
- TSOP-6 (7)
- U-DFN2020-E-6 (2)
- U-DFN2020-F-6 (1)
- U-DFN2523-6 (1)
- U-WLB1010-4 (1)
- uDFN-6 (3)
- UDFN6B-6 (2)
- UFM-3 (2)
- X1-DFN1212-3 (1)
- X1-DFN1616-6 (1)
- X2-DFN0606-3 (1)
- X2-DFN0806-3 (3)
- X2-DFN1006-3 (3)
- X2-DFN2015-3 (4)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1.4 A (1)
- - 1.5 A (3)
- - 10 A (2)
- - 10.2 A (1)
- - 10.4 A (1)
- - 11.5 A (2)
- - 12 A (1)
- - 13 A (1)
- - 14 A (2)
- - 15 A (1)
- - 16 A (2)
- - 17.5 A (2)
- - 18 A (1)
- - 19.5 A (1)
- - 2.4 A (1)
- - 2.5 A (3)
- - 2.6 A (1)
- - 2.7 A (1)
- - 2.9 A (1)
- - 20 A (2)
- - 20 mA (1)
- - 200 mA (3)
- - 250 mA (1)
- - 27 A (1)
- - 3.2 A (3)
- - 3.3 A (1)
- - 3.4 A (1)
- - 3.5 A (1)
- - 3.8 A (2)
- - 3.9 A (2)
- - 330 mA (2)
- - 4.1 A (2)
- - 4.3 A (1)
- - 4.8 A (1)
- - 4.9 A (1)
- - 430 mA (1)
- - 5 A (1)
- - 5.4 A (1)
- - 5.5 A (2)
- - 5.7 A (3)
- - 5.8 A (1)
- - 6 A (2)
- - 6.6 A (2)
- - 6.7 A (1)
- - 600 mA (1)
- - 7 A (2)
- - 7.3 A (1)
- - 7.6 A (1)
- - 70 A (1)
- - 700 mA (1)
- - 760 mA (1)
- - 8 A (2)
- - 8.2 A (2)
- - 8.7 A (1)
- - 820 mA (1)
- - 9 A (2)
- - 9.9 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.013 Ohms (1)
- 0.014 Ohms (2)
- 0.02 Ohms (1)
- 0.021 Ohms (1)
- 0.027 Ohms (1)
- 0.042 Ohms (1)
- 1 Ohms (2)
- 1.5 Ohms (1)
- 10 Ohms (1)
- 12 mOhms (1)
- 125 mOhms (2)
- 13 mOhms (1)
- 13.9 mOhms (1)
- 134 mOhms (1)
- 136 mOhms (2)
- 14 mOhms (1)
- 14.6 mOhms (1)
- 15 Ohms (2)
- 15.3 mOhms (1)
- 16 mOhms (2)
- 160 mOhms (1)
- 17 mOhms (1)
- 170 mOhms (1)
- 18 mOhms (3)
- 19 mOhms (2)
- 190 mOhms (3)
- 20 mOhms (2)
- 20 Ohms (1)
- 24 mOhms (2)
- 24.9 mOhms (1)
- 240 mOhms (1)
- 250 mOhms (1)
- 26 mOhms (1)
- 27 mOhms (2)
- 3.5 mOhms (1)
- 31 mOhms (1)
- 35 mOhms (1)
- 36 mOhms (1)
- 4 Ohms (1)
- 40 mOhms (1)
- 400 mOhms (1)
- 41 mOhms (1)
- 44 mOhms (1)
- 45 mOhms (1)
- 47.4 mOhms (1)
- 48 mOhms (1)
- 5 Ohms (1)
- 55 mOhms (2)
- 59 mOhms (1)
- 6.5 mOhms (1)
- 60 mOhms (1)
- 600 mOhms (1)
- 65 mOhms (4)
- 7 mOhms (2)
- 70 mOhms (1)
- 700 mOhms (1)
- 76 mOhms (1)
- 8 mOhms (1)
- 80 mOhms (1)
- 800 mOhms (1)
- 85 mOhms (2)
- 9.5 mOhms (1)
- 90 mOhms (1)
- 900 mOhms (1)
- Qg - Gate Charge :
-
- 0.35 nC (1)
- 0.4 nC (1)
- 0.5 nC (1)
- 0.8 nC (1)
- 0.84 nC (1)
- 1.6 nC (1)
- 1.7 nC (1)
- 10 nC (2)
- 11 nC (2)
- 11.5 nC (1)
- 11.8 nC (1)
- 12 nC (1)
- 12.1 nC (1)
- 12.8 nC (2)
- 13 nC (1)
- 140 nC (2)
- 15 nC (1)
- 15.8 nC (2)
- 16.5 nC (3)
- 17.7 nC (2)
- 175 nC (1)
- 18 nC (1)
- 19.5 nC (1)
- 22 nC (1)
- 23 nC (2)
- 23.2 nC (1)
- 23.7 nC (1)
- 24 nC (1)
- 24.2 nC (1)
- 27 nC (1)
- 28 nC (2)
- 28.2 nC (1)
- 29 nC (2)
- 29.6 nC (1)
- 29.9 nC (1)
- 3.4 nC (2)
- 3.8 nC (1)
- 31 nC (1)
- 33 nC (1)
- 38 nC (1)
- 4.6 nC (1)
- 4.7 nC (1)
- 41 nC (2)
- 42 nC (1)
- 42.7 nC (1)
- 44 nC (1)
- 47 nC (1)
- 48.7 nC (1)
- 5 nC (1)
- 5.2 nC (1)
- 52.2 nC (1)
- 59 nC (1)
- 60.4 nC (1)
- 622.4 pC (1)
- 7.5 nC (1)
- 7.8 nC (1)
- 72 nC (1)
- 75 nC (2)
- 8.7 nC (1)
- 800 pC (1)
- 9 nC (2)
- 9.1 nC (1)
- 9.6 nC (1)
- Tradename :
- Applied Filters :
84 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,923
In-stock
|
Nexperia | MOSFET 40V P-channel Trench MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 1.5 A | 400 mOhms | - 1 V | 4.7 nC | Enhancement | |||||
|
4,935
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL PCh -20V 9A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 9 A | 18 mOhms | - 1 V | 42 nC | ||||||
|
30,227
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K | 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 700 mA | 1 Ohms | - 1 V | 0.5 nC | Enhancement | |||||
|
2,937
In-stock
|
Diodes Incorporated | MOSFET 60V P-Channel 6.8A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10.4 A | 55 mOhms | - 1 V | 44 nC | Enhancement | |||||
|
5,686
In-stock
|
IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | |||||
|
4,094
In-stock
|
Diodes Incorporated | MOSFET 70V P-Channel 5.7A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 5.7 A | 160 mOhms | - 1 V | 9.6 nC | Enhancement | |||||
|
1,602
In-stock
|
Diodes Incorporated | MOSFET Dl 60V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 4.8 A | 55 mOhms | - 1 V | 23 nC | Enhancement | |||||
|
2,889
In-stock
|
Diodes Incorporated | MOSFET P-Chan 60V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.2 A | 85 mOhms | - 1 V | 12.1 nC | Enhancement | |||||
|
2,170
In-stock
|
STMicroelectronics | MOSFET | +/- 18 V | SMD/SMT | TO-252-3 | - | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 0.027 Ohms | - 1 V | 29 nC | Enhancement | |||||
|
3,578
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6.6 A | 190 mOhms | - 1 V | 9 nC | Enhancement | |||||
|
2,459
In-stock
|
Diodes Incorporated | MOSFET 40V 9.9A P-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 9.9 A | 60 mOhms | - 1 V | 29.6 nC | Enhancement | |||||
|
2,805
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 0.014 Ohms | - 1 V | 75 nC | Enhancement | TrenchFET | ||||
|
4,753
In-stock
|
Nexperia | MOSFET PMN27XPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.7 A | 27 mOhms | - 1 V | 15 nC | Enhancement | ||||||
|
3,000
In-stock
|
Diodes Incorporated | MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 18 mOhms | - 1 V | 41 nC | Enhancement | |||||
|
19,640
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET 20VDS 8VGS 49pF | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 1 Ohms | - 1 V | 0.8 nC | Enhancement | |||||
|
3,000
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | U-DFN2523-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10.2 A | 9.5 mOhms | - 1 V | 42.7 nC | Enhancement | |||||
|
6,775
In-stock
|
Diodes Incorporated | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 65 mOhms | - 1 V | 11 nC | Enhancement | |||||
|
44,430
In-stock
|
Infineon Technologies | MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 760 mA | 600 mOhms | - 1 V | 3.4 nC | ||||||
|
648
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5 A | 0.042 Ohms | - 1 V | 13 nC | Enhancement | TrenchFET | ||||
|
1,119
In-stock
|
onsemi | MOSFET POWER MOSFET | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 10 A | 44 mOhms | - 1 V | 1.7 nC | |||||||
|
12,549
In-stock
|
Diodes Incorporated | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 65 mOhms | - 1 V | 11 nC | Enhancement | |||||
|
870
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 17.5 A | 7 mOhms | - 1 V | 140 nC | Enhancement | |||||
|
895
In-stock
|
Diodes Incorporated | MOSFET 40V P-Ch Enh FET 45mOhm -10V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 20 A | 40 mOhms | - 1 V | 23.2 nC | Enhancement | |||||
|
GET PRICE |
7,410
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode -30V Low Rdson -20Vgss | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 27 A | 20 mOhms | - 1 V | 22 nC | Enhancement | ||||
|
1,449
In-stock
|
Diodes Incorporated | MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.5 A | 190 mOhms | - 1 V | 17.7 nC | Enhancement | |||||
|
2,660
In-stock
|
Nexperia | MOSFET 12V P-channel Trench MOSFET | 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.2 A | 59 mOhms | - 1 V | 12 nC | Enhancement | |||||
|
1,309
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.7 A | 13 mOhms | - 1 V | 16.5 nC | Enhancement | PowerDI | ||||
|
4,216
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: | +/- 6 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 820 mA | 1.5 Ohms | - 1 V | 622.4 pC | Enhancement | |||||
|
2,480
In-stock
|
Diodes Incorporated | MOSFET Dual P-Channel | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 430 mA | 900 mOhms | - 1 V | Enhancement | ||||||
|
4,547
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 5 Ohms | - 1 V | 0.4 nC | Enhancement |