- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,094
In-stock
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Diodes Incorporated | MOSFET 70V P-Channel 5.7A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 5.7 A | 160 mOhms | - 1 V | 9.6 nC | Enhancement | |||
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4,753
In-stock
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Nexperia | MOSFET PMN27XPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.7 A | 27 mOhms | - 1 V | 15 nC | Enhancement | ||||
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VIEW | Nexperia | MOSFET PMN42XPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.7 A | 41 mOhms | - 1 V | 11.5 nC | Enhancement |
